Schottky Barrier Catalysis Mechanism in Metal-Assisted Chemical Etching of Silicon
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چکیده
منابع مشابه
Schottky Barrier Catalysis Mechanism in Metal-Assisted Chemical Etching of Silicon.
Metal-assisted chemical etching (MACE) is a versatile anisotropic etch for silicon although its mechanism is not well understood. Here we propose that the Schottky junction formed between metal and silicon plays an essential role on the distribution of holes in silicon injected from hydrogen peroxide. The proposed mechanism can be used to explain the dependence of the etching kinetics on the do...
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Department of Physics and Materials Scien Chee Avenue, Kowloon Tong, Kowloon, Hon Department of Biology and Chemistry, Cit Avenue, Kowloon Tong, Kowloon, Hong Kon Centre for Functional Photonics (CFP), Cit Avenue, Kowloon Tong, Kowloon, Hong Kon Shenzhen Research Institute, City Universit † Electronic supplementary informa 10.1039/c4ra06172a ‡ These authors contributed equally to th Cite this: ...
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ژورنال
عنوان ژورنال: ACS Applied Materials & Interfaces
سال: 2016
ISSN: 1944-8244,1944-8252
DOI: 10.1021/acsami.6b01020